FQB8N60CTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB8N60CTM
Datasheet:
Description:
MOSFETs D2PAK-3 SMD/SMT N-Channel number of channels:1 3.13 W 600 V Continuous Drain Current (ID):7.5 A 36 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 600 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 4.83 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 8 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 3.13 W |
| Power Dissipation | 3.13 W |
| Number of Channels | 1 |
| Input capacitance | 1.255 nF |
| Continuous Drain Current (ID) | 7.5 A |
| Rds On Max | 1.2 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 16.5 ns |
| Turn-Off Delay Time | 81 ns |
| Element Configuration | Single |
| Fall Time | 64.5 ns |
| Rise Time | 60.5 ns |
| Gate Charge | 36 nC |
| Drain to Source Resistance | 1.2 Ω |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 600 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
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